发明名称 PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGE SENSOR
摘要 PROBLEM TO BE SOLVED: To provide a photoelectric conversion element optimum for a solid-state imag sensor which can pick up infrared images, based on infrared light reflected from a phtographic subject. SOLUTION: The photoelectric conversion element is equipped with a pair of electrodes, and a photoelectric conversion portion containing a photoelectric conversion film provided between the pair of electrodes. The photoelectric conversion film is constituted by containing an organic photoelectric conversion material. The organic photoelectric conversion material contains a compound, represented by the general formula (SQ-1), wherein A and B are independently a substituent whose bonding position is sp<SP>2</SP>carbon. COPYRIGHT: (C)2009,JPO&amp;INPIT
申请公布号 JP2008244296(A) 申请公布日期 2008.10.09
申请号 JP20070084981 申请日期 2007.03.28
申请人 FUJIFILM CORP 发明人 MITSUI TETSURO;KITAMURA SATORU;NOMURA KIMIATSU;HARADA TORU
分类号 H01L51/42;H01L27/146 主分类号 H01L51/42
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