METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

On one surface of a semiconductor wafer (1) having a first surface (main surface) (1a) and a second surface (rear surface) (1b), a protection film (2) is formed. At the time attracting the semiconductor wafer (1) onto an attracting surface of an electrostatic chuck (6) heated to 400°C or higher, the semiconductor wafer (1) is attracted onto the attracting surface through the protection film (2). Under a state where the semiconductor wafer (1) is heated to 400°C or higher, ions are implanted on the surface, which is of the semiconductor wafer (1) and has no protection film (2) formed thereon. Then, the protection film (2) is removed from the semiconductor wafer (1).