发明名称 METHOD FOR FABRICATING PHOTOMASK
摘要 <p>A method for manufacturing a photo mask is provided to control degree of defects less than a delivery allowable level by testing a mask to correct the defects through an aerial image measurement system prior to a delivery of the photo mask. A method for manufacturing a photo mask comprises the following steps of: designing a circuit pattern to be implemented on the mask(210); performing an exposure process according to a designed pattern to form a pattern on a photo mask substrate(220); firstly inspecting defects in the photo mask substrate on which the pattern is formed by using ultra violet rays or deep ultra violet rays(230); measuring and simulating a pattern image on the photo mask to perform a second defect inspection by using an aerial image measurement system(240); and delivering the photo mask pattern as a normal photo mask when there are no defects after the second defect inspection result.</p>
申请公布号 KR20080090794(A) 申请公布日期 2008.10.09
申请号 KR20070034108 申请日期 2007.04.06
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHO, BYEONG HO
分类号 H01L21/027 主分类号 H01L21/027
代理机构 代理人
主权项
地址