| 摘要 |
#CMT# #/CMT# The method involves isotropic etching of a silicon substrate (1) for delimiting the isolation cutting. Third layer (5) is deposited, and encapsulating a non epitaxy layer (2) and a dielectric material or silicon oxide layer (3) e.g. bilayer, and volume liberated by the isotropic etching of the substrate between layers (2, 3). An upper surface of the layer (2) is liberated, the germanium of the layer (2) is condensated to form the third layer with 80 percentages of germanium under the silicon oxide layer, and the silicon oxide layer is eliminated. #CMT#USE : #/CMT# Method for forming a germanium active zone of a microelectronic device (claimed) on an insulator with lateral insulation. #CMT#ADVANTAGE : #/CMT# The method enables the forming of the germanium active zone of the microelectronic device on the insulator with lateral insulation in an easy manner. The method ensures the increasing of electrical performances of the germanium active zone of the microelectronic device. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a schematic sectional view illustrating a step of a method for forming an active zone of a microelectronic device. 1 : Silicon substrate 2 : Non epitaxy layer 3 : Dielectric material layer or silicon oxide layer 5, 6 : Third and fourth Layers 8 : Support contact #CMT#METALLURGY : #/CMT# The former layer is made of silicon-germanium alloy. |
