| 摘要 |
#CMT# #/CMT# The method involves implanting an atomic species e.g. hydrogen ion, in a donor substrate (10) for forming an embrittlement plane (14) defining a thin ferroelectric layer (16) to be transferred. A plane face (12) of the layer is glued with a face (22) of a support substrate (20), and the layer is detached by cleaving at the level of the plane. Resulting structure comprising the transferred layer is subjected to an electrical field or thermal treatment under gaseous atmosphere having argon, nitrogen or oxygen, to improve ferroelectric properties of the layer after detachment of the layer. #CMT#USE : #/CMT# Method for manufacturing a thin ferroelectric layer of a substrate by using Smart Cut(RTM: substrate manufacturing process), for manufacturing a component. Uses include but are not limited to high dielectric constant capacitor, piezoelectric sensor, ultrasonic generator, amplifier, dielectric modulator, thermo-electric energy converter, dynamic RAM or non-volatile ferroelectric RAM. #CMT#ADVANTAGE : #/CMT# The method facilitates to conserve ferroelectric properties of the thin ferroelectric layer. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a sectional view illustrating a method for manufacturing a thin ferroelectric layer. 10 : Donor substrate 12 : Plane face 14 : Embrittlement plane 16 : Thin ferroelectric layer 20 : Support substrate 22 : Face #CMT#INORGANIC CHEMISTRY : #/CMT# The donor substrate is made of ferroelectric material e.g. lithium aluminum oxide, lithium niobate, barium titanate, lithium tantalate, lead zirconium titanate, lead titanate, potassium niobate, barium zirconate, calcium titanate or potassium tantalate. |
