PATTERN CREATION METHOD, PATTERN VERIFICATION METHOD, AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To accurately and efficiently create a pattern for a sidewall machining process.

SOLUTION: A first pattern serving as a mask pattern in forming a design pattern is simulated under arbitrary process conditions. A second pattern exhibiting a finished form of a resist on a wafer is formed. A third pattern thicker than the second pattern is formed by resizing the second pattern. A part corresponding to the second pattern is removed from the third pattern by computation on graphic data to form a fourth pattern as a trimmed pattern.

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