| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain an Si photovoltaic cell having an Si power generating film with low defect rate and high quality, and with high photovoltaic conversion efficiency. <P>SOLUTION: The manufacturing method of anμc-Si (microcrystalline silicon) or polycrystalline Si photovoltaic cell comprises a step of laminating a first transparent conductive film, and a p/i/n-type or an n/i/p-typeμc-Si or polycrystalline Si power generating film on the substrate; soaking a support substrate into a cyan solution, containing a crown ether, and bringing CN ions into theμc-Si or polycrystalline Si power generating film; cleaning the support substrate; and sequentially forming a second transparent conductive film and a backside electrode on theμc-Si or polycrystalline Si power generating film. The thickness of theμc-Si or polycrystalline Si power generating film is 1μm or larger, and the CN ions are brought into theμc-Si or polycrystalline Si power generating film, while soaking the support substrate in the crown ether. At the same time, a voltage is applied to theμc-Si or polycrystalline Si power generating film that promotes pulling in of the CN ions. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
