| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that, in a semiconductor device of micro structure mix-loaded with a high breakdown voltage transistor and a memory element, and so on, when an element isolation film formed by a selective oxidation method is employed, if a protective film for preventing leakage of a transistor due to film thinning of an element isolation insulating film is formed, gate dimension controllability has markedly deteriorated by unevenness of a semiconductor surface. SOLUTION: The protective film is provided to the part where a gate electrode and a boundary region between the element isolation film and an element region are overlapped in plane. The protective film can protect the element isolation film from film-thinning during a manufacturing process. By etching the element isolation film into a predetermined thickness, the top of a semiconductor substrate is planarized. According to this arrangement, gate dimension controllability is improved by the planarization effect, while preventing leakage under the gate electrode. COPYRIGHT: (C)2009,JPO&INPIT
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