| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial crystal undoped with impurities which does not deteriorate the interface of a crystal layer and increase the manufacturing time, and to provide an epitaxial laminated crystal. SOLUTION: An epitaxial crystal 13 undoped with impurities is grown by a MOVPE method. The crystal is grown, while growth temperatures are changed from the starting time of growth to the growth time; a V/III ratio is changed corresponding to the change in the growth temperature; and consequently, the change in the concentration of residual carbon due to the change in the growth temperature is compensated for, and the concentration of the residual carbon in a thickness direction is maintained constant. COPYRIGHT: (C)2009,JPO&INPIT
|
