| 摘要 |
<p>[PROBLEMS] To provide an organic transistor that realizes highly fine patterning, appropriate contact and prevention of leak current. [MEANS FOR SOLVING PROBLEMS] The organic transistor comprises substrate (1), gate electrode (2) superimposed on the substrate (1), gate insulating film (3) superimposed on the gate electrode (2), drain electrode (5) and source electrode (4) superimposed on the gate insulating film (3), and organic semiconductor layer (6) laid opposite to the gate electrode (2) with the gate insulating film (3) interposed therebetween between the source electrode (4) and the drain electrode (5). The organic transistor further comprises insulating layer (7) with opening (7a) defining the region of formation of the organic semiconductor layer (6), which insulating layer (7) is formed by vapor deposition of a low-molecular organic semiconductor material, such as pentacene.</p> |
