| 摘要 |
A semiconductor memory device is provided to enhance repair efficiency by preventing oxidation of fuses according to reduction of a voltage level applied to the fuses. A semiconductor memory device includes a fuse(F3), a first switch(P2), and a resistance unit(T1). The first switch supplies a driving voltage to one side of the fuse in response to a control signal. The resistance unit implemented between the fuse and the first switch drops the driving voltage and supplies the dropped driving voltage to the fuse. The semiconductor memory device further includes a second switch(N3) which supplies a ground voltage to the other side of the fuse in response to the control signal. |
