ADAPTIVE BIAS TECHNIQUE FOR FIELD EFFECT TRANSISTOR
摘要
A power amplifier includes a LDMOS transistor having a source, a drain, a control gate and a shielding electrode positioned between the control gate and the drain, and means for adaptively biasing the drain and shielding electrode power information for a RF signal.
申请公布号
WO2008076822(A3)
申请公布日期
2008.10.02
申请号
WO2007US87421
申请日期
2007.12.13
申请人
LEHIGH UNIVERSITY;MARBELL, MARVIN, NII, NARTEY;HWANG, JAMES, CHENG-MIN
发明人
MARBELL, MARVIN, NII, NARTEY;HWANG, JAMES, CHENG-MIN