发明名称 ADAPTIVE BIAS TECHNIQUE FOR FIELD EFFECT TRANSISTOR
摘要 A power amplifier includes a LDMOS transistor having a source, a drain, a control gate and a shielding electrode positioned between the control gate and the drain, and means for adaptively biasing the drain and shielding electrode power information for a RF signal.
申请公布号 WO2008076822(A3) 申请公布日期 2008.10.02
申请号 WO2007US87421 申请日期 2007.12.13
申请人 LEHIGH UNIVERSITY;MARBELL, MARVIN, NII, NARTEY;HWANG, JAMES, CHENG-MIN 发明人 MARBELL, MARVIN, NII, NARTEY;HWANG, JAMES, CHENG-MIN
分类号 H03G3/10 主分类号 H03G3/10
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