| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the structure of a semiconductor device in which the curvature of a wafer can be reduced, and its manufacturing method. <P>SOLUTION: The method of manufacturing a semiconductor device manufactured by using a semiconductor substrate having a silicon carbide (SiC) film comprises steps of forming the silicon carbide film on a semiconductor wafer 10, confirming the transformed state of the semiconductor wafer 10, and forming a groove 107 in a shape set according to the transformed state of the semiconductor wafer 10 in the silicon carbide film. When the semiconductor wafer 10 has a raised curvature extending in one direction, the grooves 107 are formed into a plurality of slit-shaped grooves 107 extending substantially vertical to a longitudinal direction in which the curvature extends. <P>COPYRIGHT: (C)2009,JPO&INPIT |
