| 摘要 |
PROBLEM TO BE SOLVED: To provide a production process of a semiconductor device equipped with interconnect, which can ensure high reliability, by preventing impairment of EM resistance caused by electrical conductivity deterioration of copper interconnect at a contact hole bottom. SOLUTION: A contact hole 20 is formed at an interlayer insulating film 13 formed on a lower layer interconnect 11. When the contact hole is formed, a cleaning step of removing an oxide layer 25 of the lower layer interconnect exposed at a bottom of the contact hole is carried out. After completion of cleaning, a conductive barrier film 14 is formed in a predetermined time. A seed film 15 and a copper plating film 17, with which the contact hole is filled up, are formed on the conductive barrier film. The predetermined time is set based on a relation, as an example, between the time from the completion of cleaning to the start of formation of the conductive barrier film, and the EM resistance of interconnect including the conductive film, with which the contact hole was filled up. COPYRIGHT: (C)2009,JPO&INPIT
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