| 摘要 |
PROBLEM TO BE SOLVED: To make uniform the width of a conductive pattern composed of silicon from bottom to top. SOLUTION: A method of manufacturing a semiconductor device includes: a step of forming a first silicon film 6 on a semiconductor substrate 1 through an insulating film 5; a step of heavily doping impurities of one conductivity type into the first silicon film 6; forming a second silicon film 9 in the first silicon film 6; a step of etching the second silicon film 9 to the depth in which the first silicon film 6 is not exposed by a first condition in a region that is exposed from a mask 10m, after forming the mask 10m of a prescribed pattern on the second silicon film 9; a step of etching the rest of the second silicon film 9 and the first silicon film 6 to the depth in which the insulating film 5 is not exposed, by a second condition having higher etching components in a vertical direction of the semiconductor substrate 1 than that of the first condition; and a step of etching the rest of the first silicon film 6 by a third condition having higher etching selection ratio to the insulating film than that of the second condition. COPYRIGHT: (C)2009,JPO&INPIT
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