| 摘要 |
PROBLEM TO BE SOLVED: To detect the temperature of a region where thermal destruction occurs most easily in a semiconductor device constructed as IGBT which incorporates FWD. SOLUTION: In a semiconductor device wherein an IGBT region 20 formed with an IGBT element and an FWD region 30 formed with an FWD element are formed on one face of an N-type layer 22, a temperature sensitive element 10 is formed on the surface of the N-type layer 22 via an interlayer insulation film 40 so as to include at least a boundary portion 50 between the IGBT region 20 and the FWD region 30. Due to this structure, the time when the FWD element is working and the time when the IGBT element is working are detected by the single temperature sensitive element 10. COPYRIGHT: (C)2009,JPO&INPIT
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