发明名称 |
At least penta-sided-channel type of finfet transistor |
摘要 |
An at least penta-sided-channel type of FinFET transistor may include: a base; a semiconductor body formed on the base, the body being arranged in a long dimension to have source/drain regions sandwiching a channel region, at least the channel, in cross-section transverse to the long dimension, having at least five planar surfaces above the base; a gate insulator on the channel region of the body; and a gate electrode formed on the gate insulator.
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申请公布号 |
US2008242010(A1) |
申请公布日期 |
2008.10.02 |
申请号 |
US20080149329 |
申请日期 |
2008.04.30 |
申请人 |
RHEE HWA-SUNG;KIM HYUN-SUK;TETSUJI UENO;YOO JAE-YOON;LEE SEUNG-HWAN;LEE HO;PARK MOON-HAN |
发明人 |
RHEE HWA-SUNG;KIM HYUN-SUK;TETSUJI UENO;YOO JAE-YOON;LEE SEUNG-HWAN;LEE HO;PARK MOON-HAN |
分类号 |
H01L21/336;H01L29/78;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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