ISOLATED INTEGRATED CIRCUIT DEVICES

摘要

An isolation structure for a semiconductor device comprises a floor isolation region, a dielectric filled trench above the floor isolation region and a sidewall isolation region extending downward from the bottom of the trench to the floor isolation region. This structure provides a relatively deep isolated pocket in a semiconductor substrate while limiting the depth of the trench that must be etched in the substrate. A variety of devices, including MOSFETs, bipolar transistors, diodes, and JFETs, are formed in the isolated pocket.