METHOD FOR FABRICATING ORGANIC THIN FILM TRANSISTOR SUBSTRATE

摘要

A method for manufacturing a thin film transistor substrate is provided to improve electrical characteristics of a thin film transistor by neutralizing a surface of a gate insulating layer. A gate electrode(20) is formed on a substrate(10). A gate insulating layer(30) is formed on the gate electrode. A channel region is defined on the gate insulating layer by using a source electrode(260) and a drain electrode(265). A neutralization process is performed to neutralize the channel region. A bank insulating layer(70) is formed on the source electrode and the drain electrode. An organic semiconductor layer(100) is formed on a predetermined region which is prepared by the bank insulating layer.