发明名称 |
MANUFACTURING METHOD OF PHASE SHIFT MASK AND PHASE SHIFT MASK |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a phase shift mask which has a binary pattern region and a plurality of phase shift pattern regions on one mask and also has superior size precision and positioning precision and high quality using photolithography of≤65 nm in half pitch on a wafer, and the phase shift mask obtained by the manufacturing method. <P>SOLUTION: Disclosed is the manufacturing method in which a translucent film and a light shielding film, and an intermediate film stopping etching using chlorine system upon occasion are provided, and chlorine-based gas and fluorine-based gas are used in combination as dry etching gas to carry out patterning in sequence without damaging a lower layer. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
申请公布号 |
JP2008233488(A) |
申请公布日期 |
2008.10.02 |
申请号 |
JP20070072322 |
申请日期 |
2007.03.20 |
申请人 |
DAINIPPON PRINTING CO LTD |
发明人 |
NAGAI TAKAHARU;MORIKAWA YASUTAKA;TOYAMA NOBUTO;ADACHI TAKASHI;INAZUKI YUICHI |
分类号 |
G03F1/32;G03F1/68;G03F1/80;H01L21/027 |
主分类号 |
G03F1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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