| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing composition for effectively and stably polishing the plane and edge portion of a semiconductor wafer wherein a metal film, an oxide film, a nitride film, or the like is formed on the surface thereof. <P>SOLUTION: This semiconductor wafer polishing composition obtained by wet grinding using grinding media contains fumed silica having the following characteristics (A)-(C), and the concentration of silica particles containing the fumed silica is 0.5-50 wt.% with respect to the whole water dispersion liquid. As to the fumed silica, (A) the specific surface area measured by BET method is 50-200 m<SP>2</SP>/g, (B) the average particle diameter according to laser light scattering method is 10-50 nm, (C) the average value of the ratio A/B of particle length A to breadth B thereof lies between 1.2 and 2.0 when observed with TEM. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
