发明名称 MANUFACTURE PROCESS AND STRUCTURE OF LAND PAD USED FOR LED EPITAXIAL WAFER
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacture process and structure of a land pad used for an LED epitaxial wafer, which ensures adhesion force between the land pad and the epitaxial wafer and improves the problem of excessive surface roughness of the land pad. <P>SOLUTION: In the manufacture process and structure of the land pad used for the LED epitaxial wafer, a means for increasing interface bonding force is executed to the surface of the epitaxial wafer first, and then a metal precipitation means is executed to the surface of the epitaxial wafer. Plasma treatment is executed to the surface of the epitaxial wafer first and the adhesion force between the land pad and the epitaxial wafer is ensured. In addition, an electrodepositing condition is controlled further, grains of electrodepositing precipitate are turned to fine grains, the problem of the excessive surface roughness of the land pad is improved, and the adhesion strength of the land pad and electric wire bonding is increased. Also, a conductive adhesive layer is precipitated between a first metal layer and a second metal layer and the interface bonding force of the first metal layer and the second metal layer is increased. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008235729(A) 申请公布日期 2008.10.02
申请号 JP20070075866 申请日期 2007.03.23
申请人 FUPO ELECTRONICS CORP 发明人 LUH SONG-PING;CHIANG JUNG HWA;LEE MING SHUN
分类号 H01L21/28;H01L33/40 主分类号 H01L21/28
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