| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of narrowing down a range wherein two transistors have variance in characteristic when difference between characteristics of the two transistors need to be made small. SOLUTION: The semiconductor device has a first transistor 10a having a first gate electrode 4a, a low-density impurity region 6a, and a first impurity region 7a serving as a source and a drain, a second transistor 10b having a second gate electrode 4b and a second impurity region 7b serving as a source and drain and not having a low-density impurity region, and a third transistor 10c having a third gate electrode 4c and a third impurity region 7c serving as a source and a drain and not having a low-density impurity region. The second transistor 10b and third transistor 10c are in nearly the same shapes. COPYRIGHT: (C)2009,JPO&INPIT
|
