| 摘要 |
PROBLEM TO BE SOLVED: To form MOSFETs having a different operating voltage efficiently at a low cost. SOLUTION: In a manufacturing method of a semiconductor device, when the MOSFETs having the different operating voltage are formed at an identical channel type, an ion implantation for adjusting Vth of the MOSFETs which operate at a high voltage is carried out by use of a resist pattern used in a first ion implantation process of forming well regions thereof (S2 to S4), and further another resist pattern is formed to carry out the ion implantation for adjusting Vth of the MOSFETs which operate at a low voltage (S5 and S6). Thus, it becomes possible to curtail a formation-removal process of a mask pattern and the number of reticles in use, and the MOSFETs having the different operating voltage can be formed efficiently at a low cost with a constant performance being ensured. COPYRIGHT: (C)2009,JPO&INPIT
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