发明名称 Semiconductor Device and Method of Manufacturing the Same
摘要 Disclosed is a semiconductor device in which emitter pad electrodes connected to an active region, collector and base pad electrodes are formed on a surface of a semiconductor substrate. Furthermore, on a back surface of the semiconductor substrate, a backside electrode is formed. Moreover, the emitter pad electrodes connected to a grounding potential are connected to the backside electrode through feedthrough electrodes penetrating the semiconductor substrate in a thickness direction.
申请公布号 US2008237808(A1) 申请公布日期 2008.10.02
申请号 US20080134861 申请日期 2008.06.06
申请人 SANYO ELECTRIC CO., LTD.;KANTO SEMICONDUCTORS CO., LTD. 发明人 KUBO HIROTOSHI;SHIRAHATA YUKARI;MATSUMOTO SHIGEHITO;YAMAMURO MASAMICHI;KAMEYAMA KOUJIRO;UMEMOTO MITSUO
分类号 H01L23/538;H05K1/18 主分类号 H01L23/538
代理机构 代理人
主权项
地址