发明名称 |
Method for fabricating semiconductor device |
摘要 |
A method for fabricating a semiconductor device is disclosed. The method includes providing a first chamber and a second chamber. The first chamber and the second chamber are connected by a pressure differential unit, for depositing a metallic film over a substrate in the first chamber, transferring the substrate to the second chamber via the pressure differential unit without exposing the substrate to the ambient environment, and depositing a silicon-containing film on the metallic film in the second chamber.
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申请公布号 |
US2008242108(A1) |
申请公布日期 |
2008.10.02 |
申请号 |
US20070730551 |
申请日期 |
2007.04.02 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHANG WENG;YEN FONG-YU;TAO HUN-JAN;LIANG MONG-SONG |
分类号 |
H01L21/46 |
主分类号 |
H01L21/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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