METHODS OF FORMING IMPROVED EPI FILL ON NARROW ISOLATION BOUNDED SOURCE/DRAIN REGIONS AND STRUCTURES FORMED THEREBY

摘要

Methods and associated structures of forming a microelectronic device are described. Those methods may include plasma etching a portion of a source/drain region of a transistor, and then selectively wet etching the source drain region along a (100) plane to form at least one (111) region in the recessed source/drain region.