发明名称 |
COMPOUND SEMICONDUCTOR DEVICE INCLUDING AIN LAYER OF CONTROLLED SKEWNESS |
摘要 |
A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
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申请公布号 |
US2008237610(A1) |
申请公布日期 |
2008.10.02 |
申请号 |
US20080059693 |
申请日期 |
2008.03.31 |
申请人 |
FUJITSU LIMITED;HITACHI CABLE, LTD. |
发明人 |
IMANISHI KENJI;KIKKAWA TOSHIHIDE;TANAKA TAKESHI;MORIYA YOSHIHIKO;OTOKI YOHEI |
分类号 |
H01L29/267;H01L21/203;H01L21/338 |
主分类号 |
H01L29/267 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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