| 摘要 |
A positive resist composition is provided to inhibit generation of water marks when carrying out immersion exposure, and to realize an excellent film reduction margin(excessive exposure margin). A positive resist composition comprises: (A) a resin containing repeating units represented by the following formula (a1) and having a solubility increasing in an alkaline developing agent under the action of an acid; (B) a compound generating an acid by the irradiation of active rays or radiation; (C) a resin containing at least one of fluorine and silicon atoms and having a group selected from the following (x), (y) and (z); and (D) a solvent, wherein (x) is an alkaline-soluble group; (y) is a group that is decomposed under the action of an alkaline developing agent to increase the solubility of the resin (C) in the alkaline developing agent; and (z) is a group decomposed under the action of an acid. In formula (a1), R is H or CH3; Rxa is alkyl or cycloalkyl; and n is an integer of 1-8. |
