| 摘要 |
An ultraviolet photodetector, a manufacturing method thereof, and an ultraviolet quantity measuring apparatus are provided to output ultraviolet quantities in UV-A and UV-B wavelength ranges from a first photodiode and the ultraviolet quantity in the UV-A wavelength range from a second photodiode. An ultraviolet photodetector(1) includes a silicon semiconductor layer(4), lateral PN junction type first and second photodiodes(6a,6b), an interlayer insulating film(18), and first and second filter layers(24a,24b). The silicon semiconductor layer is formed on an insulating layer and has a thickness of 3 to 36 nm. The first and second photodiodes are formed on the silicon semiconductor layer. The interlayer insulating film is formed on the silicon semiconductor layer. The first filter layer is formed on the interlayer insulating film on the first photodiode to transmit light in a UV-B wavelength range and made of silicon nitride. The second filter layer is formed on the interlayer insulating film on the second photodiode to transmit light in a UV-A wavelength range and made of silicon nitride.
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