GROUP III-V SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a group III-V semiconductor element having a novel structure wherein current leakage or short-circuit can be prevented at the end face of the semiconductor element.

SOLUTION: The semiconductor layer 101 made of group III nitride semiconductor is formed like a reverse-tapered shape wherein its cross sectional area gradually decreases toward a supporting substrate 107, and a p electrode 102 and a low-melting-point metal diffusion preventive layer 103 are formed on the lower surface of the semiconductor layer 101, and they are joined with the supporting substrate 107 by means of low-melting-point metal layers 105 and 106. An n electrode 108 is formed like a lattice on the upper surface of the semiconductor layer 101. A high resistance area 110 is formed on the side end face of the semiconductor layer 101 by ion implantation, and a high resistance area 111 is also formed adjacent to the side end face of the upper surface of the semiconductor layer 101 by ion implantation. These high resistance areas 100 and 111 prevent the leakage of current or short-circuit.

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