| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high-quality photoelectric conversion material and a method of manufacturing the same, to provide a semiconductor device having the photoelectric conversion material, and to provide a solar battery. <P>SOLUTION: The photoelectric conversion material has an impurity-diffused region with zinc and/or cadmium diffused formed in the surface layer portion of a semiconductor thin film, comprising a p-type chalcopyrite compound semiconductor containing sulfur and/or selenium, thereby forming a pn junction. The p-n junction is preferably a p-n homojunction. The method of manufacturing the photoelectric conversion material includes a step of forming a p-n homojunction or a p-n heterojunction by applying a heat treatment to a base material, made of a p-type chalcopyrite compound semiconductor containing sulfur and/or selenium in an atmosphere containing organic metal zinc compound and/or organic metal cadmium compound. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
