摘要 |
A dielectric cap (100) and related methods are disclosed. In one embodiment, the dielectric cap (100) includes a dielectric material (108) having an optical band gap (e.g., greater than about 3.0 electron-Volts) to substantially block ultraviolet radiation during a curing treatment, and including nitrogen with electron donor, double bond electrons. The dielectric cap (100) exhibits a high modulus and is stable under post ULK UV curing treatments for, for example, copper low k back-end-of-line (BEOL) nanoelectronic devices, leading to less film and device cracking and improved reliability. |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;BELYANSKY, MICHAEL, P.;BONILLA, GRISELDA;LIU, XIAO, HU;NGUYEN, SON, VAN;SHAW, THOMAS, M.;SHOBHA, HOSADURGA, K.;YANG, DAEWON |
发明人 |
BELYANSKY, MICHAEL, P.;BONILLA, GRISELDA;LIU, XIAO, HU;NGUYEN, SON, VAN;SHAW, THOMAS, M.;SHOBHA, HOSADURGA, K.;YANG, DAEWON |