摘要 |
<p>Provided are a zinc oxide semiconductor manufacturing method for easily manufacturing a high quality zinc oxide semiconductor, and an apparatus for manufacturing such semiconductor. A zinc oxide semiconductor manufacturing apparatus (1) is provided with a chlorine gas supplying means (2), a carrier gas supplying means (3), a material zone (4), a heating means (5), a water supplying means (6), a carrier gas supplying means (7), a growing zone (8), a heating means (9), a substrate holding means (10), and a hydrogen supplying means (11). In the material zone (4), chlorine gas supplied from the chlorine gas supplying means (2) and zinc are reacted, and zinc chloride gas is generated. In the growing zone (8), the zinc chloride supplied from the material zone (4) and water supplied from the water supplying means (6) as oxygen material are reacted, and the zinc oxide semiconductor is grown on the growing substrate (16) held by the substrate holding means (10).</p> |
申请人 |
ROHM CO., LTD.;KOUKITSU, AKINORI;KUMAGAI, YOSHINAO;FUJII, TETSUO |
发明人 |
KOUKITSU, AKINORI;KUMAGAI, YOSHINAO;FUJII, TETSUO |