RESIST COMPOSITION AND PATTERNING PROCESS

摘要

A resist material is provided to improve the contrast by modifying the surface layer of photoresist, thereby improving the rectangularity of a pattern and mask reliability, and to prevent generation of a mixed layer of a resist layer with a protective layer in immersion lithography. A resist material comprises a polymer compound functioning as a base resin that undergoes a change in alkali solubility under the action of an acid, and a polymeric additive comprising a polymer compound obtained by copolymerizing repeating units having ammonium carboxylate groups and repeating units having at least one fluorine atom. The resist material is used as a chemically amplified negative or positive material.