| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition for thermal lithography in which a resist pattern with excellent profile can be formed by thermal lithography, to provide a resist laminate using the resist composition for thermal lithography, and to provide a method for forming a resist pattern using the resist laminate. <P>SOLUTION: The resist composition for thermal lithography is used to form a resist film that does not react with light at the wavelength of an exposure light source, on an underlay film for thermal lithography absorbing light at the wavelength of the exposure light source used in thermal lithography. The resist composition is prepared by dissolving a base component (A) the solubility of which with an alkali developer changes by the effect of an acid and an acid generator component (B) generating an acid by the effect of heat, in an organic solvent (S) containing a polyalkyleneglycol-based solvent (S1). <P>COPYRIGHT: (C)2009,JPO&INPIT |
