| 摘要 |
PROBLEM TO BE SOLVED: To suppress diffusion of nitrogen near the interface between a silicon substrate and a gate insulation film while suppressing diffusion of boron in a gate electrode into the silicon substrate, in a manufacturing method of a semiconductor device formed with the gate insulation film which has a two-layer structure consisting of a silicon oxide film and a silicon nitride film. SOLUTION: The manufacturing method of the semiconductor device includes steps of: forming the silicon oxide film 13 on the silicon substrate 11; and forming the silicon nitride film 14 on the silicon oxide film 13. The step of forming the silicon nitride film 14 includes a first step of growing, on the silicon oxide film 13, a silicon layer 21 having a thickness larger than that of an atomic layer, a second step of nitriding the silicon layer 21 to form a silicon nitride layer 22, a third step of growing a silicon atomic layer 23, and a fourth step of nitriding the silicon atomic layer 23 to form a silicon nitride layer 24. These steps are performed in this order. COPYRIGHT: (C)2009,JPO&INPIT |
