METHOD FOR OPERATING FERROELECTRIC OR ELECTRET MEMORY DEVICE, AND DEVICE OF THIS KIND

摘要

PROBLEM TO BE SOLVED: To obviate change or drift in response of a memory cell caused by variation in a hysteresis curve and switching speed in an addressing operation of a ferroelectric or electret memory device. SOLUTION: At least one parameter indicating switching speed response change of the ferroelectric or electret memory is determined. At least one correction factor is determined by determining a switching speed dependence correction factor. Alternatively, the correction factor is determined by determining at least one temperature dependence correction factor. Thus, at least one pulse parameter related to the potential level predetermined by a voltage pulse protocol is adjusted by the at least one correction factor. COPYRIGHT: (C)2009,JPO&INPIT