发明名称 ALUMINUM SUBSTRATE FOR ETCHING, AND ALUMINUM ELECTRODE MATERIAL FOR ELECTROLYTIC CAPACITOR USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide an aluminum substrate for etching used for manufacturing a capacitor capable of exhibiting higher electrostatic capacity and also to provide an aluminum electrode material for electrolytic capacitor using the aluminum substrate for etching. SOLUTION: This aluminum substrate for etching is an aluminum substrate used for etching and is characterized as follows: (1) the aluminum substrate is constituted in such a way that at least one metal layer selected from the group consisting of Cu, Ni, Co, Fe, Mn, Mg, Zn, Pb, Bi, In, Sn and Sb is formed on the surface of an aluminum foil layer; (2) the aluminum foil layer has a plurality of crater-like recesses on its surface; and (3) as regards the plurality of crater-like recesses, the average size of openings ranges from 0.05 to 5 μm. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008231512(A) 申请公布日期 2008.10.02
申请号 JP20070073303 申请日期 2007.03.20
申请人 ONO SACHIKO;TOYO ALUMINIUM KK 发明人 ONO SACHIKO;ASO HIDETAKA;MEHATA MASASHI
分类号 C22C21/00;C22F1/00;C22F1/04;C25D11/16;C25D11/24;C25F3/04;H01G9/04;H01G9/042;H01G9/055 主分类号 C22C21/00
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