| 摘要 |
In one embodiment, the present invention includes a method for forming a transistor that includes forming a first buffer layer of silicon germanium tin (SiGe(Sn)) on a silicon (Si) substrate, forming a barrier layer on the first buffer layer, the barrier layer comprising silicon germanium (Si<SUB>1-x</SUB>Ge<SUB>x</SUB>), and forming a quantum well (QW) layer on the barrier layer including a lower QW barrier layer formed of silicon germanium carbon (Si<SUB>1-y</SUB>Ge<SUB>y</SUB>(C)), a strained QW channel layer formed of germanium on the lower QW layer, and an upper QW barrier layer on the strained QW channel layer formed of Si<SUB>1-z</SUB>Ge<SUB>z</SUB>(C). Other embodiments are described and claimed.
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