发明名称 Method for Manufacturing Memory Element
摘要 A first conductive layer is formed, a composition layer over the first conductive layer is formed by discharging a composition in which nanoparticles comprising a conductive material covered with an organic material are dispersed in a solvent, and the composition layer is dried. Subsequently, pretreatment is performed in which the organic material covering the nanoparticles, which are positioned on a surface of the composition layer, is decomposed, and then baking is performed. In this manner, a second conductive layer is formed by sintering nanoparticles which are positioned on a surface of the composition layer. A memory layer is formed between the first conductive layer and the second conductive layer using the nanoparticles covered with the organic materials to which the pretreatment is not performed.
申请公布号 US2008242083(A1) 申请公布日期 2008.10.02
申请号 US20080050687 申请日期 2008.03.18
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YOSHIZUMI KENSUKE
分类号 H01L21/44 主分类号 H01L21/44
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