| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a plasma CVD technology with which a film can be formed efficiently on a large-scale substrate by a simple structure. <P>SOLUTION: The film formation apparatus comprises a vacuum treatment chamber 2 into which a material gas can be introduced; a pair of discharge electrodes which can be disposed to face in opposite directions nearly in parallel while being separated by at least 150 mm in the vacuum treatment chamber 2, the pair of discharge electrodes consisting of a substrate disposition electrode 9 to dispose a substrate on and a discharge electrode having a shower plate 4 so structured as to allow the material gas 40 introduced into the vacuum treatment chamber 2 to pass through a plurality of fine holes thereof toward the substrate disposition electrode 9; a power supplying portion 30 so structured as to apply low-frequency AC voltage of not less than 100 kHz and not more than 1 MHz to the substrate disposition electrode 9; and a substrate transfer mechanism 50 having hoist pins 51 which can move freely so as to dispose the substrate 10 on the substrate disposition electrode 9 to hold the substrate 10 between the substrate disposition electrode 9 and the shower plate 4, keeping the substrate disposition electrode 9 and the shower plate 4 separated by a desired distance of 150 mm or above, as well as to move the substrate 10 away from the substrate disposition electrode 9. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
