| 摘要 |
A method of manufacturing a solid image pick-up device comprising a photoelectronic conversion portion, a charge transfer portion and a peripheral circuit portion, the method comprising: forming a pattern comprising a first layer silicon conductive film to a surface of a semiconductor, the first layer silicon conductive film forming: a first electrode; and a first layer interconnection for the photoconductive conversion portion and the peripheral circuit portion; forming an insulative film at least to a side wall of the first electrode; forming a second silicon conductive film being to form a second electrode to the semiconductor substrate; coating a resist over the semiconductor substrate by a spin coating method; and planarizing the second layer silicon conductive film by a resist etching-back method, wherein the pattern further comprises at least one dummy pattern, and a surface level of the resist is not below a predetermined value over the semiconductor substrate.
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