| 摘要 |
A semiconductor device includes a pad; an internal circuit; a protection FET that has a drain connected to the pad, and a source connected to a reference potential; a first resistive element that is connected between the drain of the protection FET and the internal circuit, and has a larger resistance value than the value of the series resistance between the drain of the protection FET and the pad; a capacitive element that is connected between the pad and the gate of the protection FET; and a second resistive element that is connected between the gate of the protection FET and the source of the protection FET.
|
