| 摘要 |
A method for making a semiconductor structure ( 10 ) includes providing a wafer with a structure ( 16 ) having a sidewall, forming a sidewall spacer ( 22 ) adjacent to the sidewall, and forming a layer of material ( 28 ) over the wafer including over the sidewall spacer and over the structure having the sidewall. The method further includes etching the layer, wherein the etching (i) leaves at least portions of the sidewall spacer exposed and (ii) leaves a portion of the layer located over the structure having a sidewall. The portion of the layer located over the structure having a sidewall is reduced in thickness by the etching. Subsequent to etching the layer, the method includes removing the sidewall spacer.
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