| 摘要 |
A field effect transistor ("FET") is formed to include a stress in a channel region of an active semiconductor region of an SOI substrate. A gate is formed to overlie the active semiconductor region, after which a sacrificial stressed layer is formed which overlies the gate and the active semiconductor region. Then, the SOI substrate is heated to cause a flowable dielectric material in a buried dielectric layer of the SOI substrate to soften and reflow. As a result of the reflowing, the sacrificial stressed layer induces stress in a channel region of the active semiconductor region underlying the gate. A source region and a drain region are formed in the active semiconductor region, desirably after removing the sacrificial stressed layer.
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