发明名称 Method of forming resist pattern and semiconductor device manufactured with the same
摘要 A method of forming a resist pattern through liquid immersion exposure in which exposure is performed such that a liquid film is formed between a substrate for a semiconductor device on which a processed film is formed and an objective lens arranged above the substrate is provided, and the substrate treated with a water-repellent agent solution composed of at least a water-repellent agent and a solvent is exposed to light.
申请公布号 US2008241489(A1) 申请公布日期 2008.10.02
申请号 US20080078098 申请日期 2008.03.27
申请人 RENESAS TECHNOLOGY CORP. 发明人 ISHIBASHI TAKEO;TERAI MAMORU;HAGIWARA TAKUYA;YAMAGUCHI ATSUMI
分类号 H01L23/00;B32B3/00;G03F7/207 主分类号 H01L23/00
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