发明名称 |
Method of forming resist pattern and semiconductor device manufactured with the same |
摘要 |
A method of forming a resist pattern through liquid immersion exposure in which exposure is performed such that a liquid film is formed between a substrate for a semiconductor device on which a processed film is formed and an objective lens arranged above the substrate is provided, and the substrate treated with a water-repellent agent solution composed of at least a water-repellent agent and a solvent is exposed to light.
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申请公布号 |
US2008241489(A1) |
申请公布日期 |
2008.10.02 |
申请号 |
US20080078098 |
申请日期 |
2008.03.27 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
ISHIBASHI TAKEO;TERAI MAMORU;HAGIWARA TAKUYA;YAMAGUCHI ATSUMI |
分类号 |
H01L23/00;B32B3/00;G03F7/207 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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