| 摘要 |
<p>A chemically amplified negative resist composition is provided to prevent formation of bridges between patterns even when forming a fine pattern smaller than 0.1 micrometer, and to form a resist layer with high resolution. A chemically amplified negative resist composition comprises a polymeric compound containing repeating units represented by the following formulae 1 and 2 and having a weight average molecular weight of 1,000-50,000. In the formulae, each of R1 and R2 represents H or methyl; X represents an electron-withdrawing group; m is an integer of 0 or 1-4; and n is an integer of 1-5.</p> |
