发明名称 METHOD FOR MANUFACTURING INTERCONNECTION STRUCTURE WITH CAVITIES FOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a novel method for producing air gaps in an interconnection structure. SOLUTION: The method for manufacturing a structure of electrical interconnections of the damascene type for an integrated circuit, comprising at least one level of interconnections consisting of electrical conductors arranged on a substrate and separated from one another by air gaps, and having a layer of electrically insulating material covering the level of interconnections, comprises the steps of: depositing a layer of sacrificial material on the substrate; etching the layer of sacrificial material with a pattern corresponding to the electrical conductors; depositing, on the etched layer of the layer of sacrificial material, a layer of membrane in material permeable to an attack agent capable of breaking down the sacrificial material; breaking down the sacrificial material by means of the attack agent such that the air gaps are formed in place of the broken down sacrificial material; forming electrical conductors in the etched pattern so as to obtain electrical conductors separated by air gaps; and depositing a layer of electrically insulating material so as to cover the level of interconnections obtained. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008235890(A) 申请公布日期 2008.10.02
申请号 JP20080066629 申请日期 2008.03.14
申请人 COMMISS ENERG ATOM 发明人 GAILLARD FREDERIC-XAVIER
分类号 H01L21/768;H01L23/522 主分类号 H01L21/768
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