| 摘要 |
The LDMOS transistor ( 1 ) of the invention comprises a substrate ( 2 ), a gate electrode ( 10 ), a substrate contact region ( 11 ), a source region ( 3 ), a channel region ( 4 ) and a drain region ( 5 ), which drain region ( 5 ) comprises a drain contact region ( 6 ) and drain extension region ( 7 ). The drain contact region ( 6 ) is electrically connected to a top metal layer ( 23 ), which extends over the drain extension region ( 7 ), with a distance ( 723 ) between the top metal layer ( 23 ) and the drain extension region ( 7 ) that is larger than 2mum. This way the area of the drain contact region ( 6 ) may be reduced and the RF power output efficiency of the LDMOS transistor ( 1 ) increased. In another embodiment the source region ( 3 ) is electrically connected to the substrate contact region ( 11 ) via a suicide layer ( 32 ) instead of a first metal layer ( 21 ), thereby reducing the capacitive coupling between the source region ( 3 ) and the drain region ( 5 ) and hence increasing the RF power output efficiency of the LDMOS transistor ( 1 ) further.
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